No | Part number | Description ( Function ) | Manufacturers | |
1 | EMD02N06E | Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 3.1mΩ ID 191A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMD02N06E LIMITS |
Excelliance MOS |
0  1  2  3  4  5  6  7  8 9 |
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