Datasheet EMB70N08A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	EMB70N08A	Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 65mΩ ID 15A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwis	Excelliance MOS

EMB70N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
EMB70N08C	Field Effect Transistor N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 65mΩ ID 15A G UIS, 100% Tested Pb-Free Lead Plating & Halogen Free S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBO	Excelliance MOS
EMB70N08G	Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 65mΩ ID UIS, 100% Tested 6A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °	Excelliance MOS
EMB70N08V	Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 65mΩ ID UIS, 100% Tested 6A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °	Excelliance MOS

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Número de pieza	Descripción	Fabricantes	PDF
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