No | Part number | Description ( Function ) | Manufacturers | |
1 | EMB39P04V | Field Effect Transistor P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐40V D RDSON (MAX.) 39mΩ ID ‐12A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source |
Excelliance MOS |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
EMB39P04A | Field Effect Transistor P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐40V D RDSON (MAX.) 39mΩ ID ‐12A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS ( |
Excelliance MOS |
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2N3904 | 40V, 200mA, NPN Switching Transistor DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3904 NPN switching transistor Product specification Supersedes data of 1997 Jul 15 1999 Apr 23 Philips Semiconductors Product specification NPN switching transistor FEATURES • Low current (max. 200 mA) • Low v |
NXP Semiconductors |
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2N3904 | 40V, 200mA, NPN SIMALL SIGNAL TRANSISTOR 2N3904 NPN SMALL SIGNAL TRANSISTOR Features Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available (2N3906) Mechanical Data Case: TO-92, Plastic Leads: Solderable |
TRSYS |
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