No | Part number | Description ( Function ) | Manufacturers | |
26 | EMB3 | General purpose (dual digital transistors) EMB3 / UMB3N / IMB3A Transistors General purpose (dual digital transistors) EMB3 / UMB3N / IMB3A !Features 1) Two DTA143T chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. !External dimensions (Units : mm) (4) 0.65 1.3 0.65 0.8 1.1 0.95 0.95 1.9 2.9 |
ROHM Semiconductor |
|
25 | EMB3 | Dual Digital Transistors JC(T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) EMB3 Dual Digital Transistors (PNP+PNP) FEATURES z Two DTA143T chips in a package z Transistor elements are independent, eliminating interference z Mounting cost and area can be cut in half SOT-563 MARKING: B3 Absolute maximum ratings(Ta=25℃) Parameter Collector-base voltage |
JCET |
|
24 | EMB30B03V | Field Effect Transistor Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 35mΩ ID ‐6.5A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous |
Excelliance MOS |
|
23 | EMB30P03A | Field Effect Transistor P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V D RDSON (MAX.) 30mΩ ID ‐22A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source |
Excelliance MOS |
|
22 | EMB30P03VAT | Field Effect Transistor P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V D RDSON (MAX.) 30mΩ ID ‐8A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Bottom View S DD SD GD D PIN 1 SYMBOL EMB30P03VA |
Excelliance MOS |
|
21 | EMB32A03G | Field Effect Transistor Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 32mΩ ID 6.5A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Dra |
Excelliance MOS |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |