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EMB3 PDF Datasheet

The EMB3 is Dual Digital Transistors, General Purpose (dual Digital Transistors). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
26 EMB3
General purpose (dual digital transistors)

EMB3 / UMB3N / IMB3A Transistors General purpose (dual digital transistors) EMB3 / UMB3N / IMB3A !Features 1) Two DTA143T chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. !External dimensions (Units : mm) (4) 0.65 1.3 0.65 0.8 1.1 0.95 0.95 1.9 2.9

ROHM Semiconductor
ROHM Semiconductor
pdf
25 EMB3
Dual Digital Transistors

JC(T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) EMB3 Dual Digital Transistors (PNP+PNP) FEATURES z Two DTA143T chips in a package z Transistor elements are independent, eliminating interference z Mounting cost and area can be cut in half SOT-563 MARKING: B3 Absolute maximum ratings(Ta=25℃) Parameter Collector-base voltage

JCET
JCET
pdf
24 EMB30B03V
Field Effect Transistor

    Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  ‐30V  RDSON (MAX.)  35mΩ  ID  ‐6.5A      Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  SYMBOL  Gate‐Source Voltage  Continuous 

Excelliance MOS
Excelliance MOS
pdf
23 EMB30P03A
Field Effect Transistor

    P‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  ‐30V  D RDSON (MAX.)  30mΩ  ID  ‐22A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  SYMBOL  Gate‐Source

Excelliance MOS
Excelliance MOS
pdf
22 EMB30P03VAT
Field Effect Transistor

    P‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  ‐30V  D RDSON (MAX.)  30mΩ  ID  ‐8A  G    S Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  Bottom View S DD SD GD D PIN 1 SYMBOL  EMB30P03VA

Excelliance MOS
Excelliance MOS
pdf
21 EMB32A03G
Field Effect Transistor

    Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:    BVDSS  30V  RDSON (MAX.)  32mΩ  ID  6.5A      Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  SYMBOL  Gate‐Source Voltage  Continuous Dra

Excelliance MOS
Excelliance MOS
pdf

[1]    [2]    [3]    [4]    [5]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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