No | Part number | Description ( Function ) | Manufacturers | |
1 | EMB26N10F | Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 30mΩ ID 30A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltag |
Excelliance MOS |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to EMB26N10F |
Part No | Description ( Function) | Manufacturers | |
EMB26N10A | Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 30mΩ ID 50A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = |
Excelliance MOS |
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EMB26N10E | Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 30mΩ ID 50A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = |
Excelliance MOS |
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EMB26N10G | Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 30mΩ ID 9A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = |
Excelliance MOS |
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EMB26N10H | Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 30mΩ ID 33A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = |
Excelliance MOS |
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1N2610 | GOLD BONDED GERMANIUM DIODES |
New Jersey Semiconductor |
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Part Number | Function | Manufacturers | |
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Vishay |
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ON Semiconductor |
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