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EMB21C03G PDF Datasheet

The EMB21C03G is Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 EMB21C03G
Field Effect Transistor

    N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:    N‐CH  P‐CH  BVDSS  RDSON (MAX.)  30V  ‐30V  21mΩ  35mΩ  ID  7.5A  ‐6A    UIS, Rg 100% Tested  Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST

Excelliance MOS
Excelliance MOS
pdf

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Recommended search results related to EMB21C03G

Part No Description ( Function) Manufacturers PDF
EMB21C03A   Field Effect Transistor

    N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:    BVDSS  RDSON (MAX.)  N‐CH  30V  21mΩ  P‐CH  ‐30V  40mΩ  D1 G1 D2 G2 ID  8A  ‐6A  S1 S2   UIS, 100% Tested  Pb‐Free Lead Plating 

Excelliance MOS
Excelliance MOS
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EMB21C03S   Field Effect Transistor

    N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:    N‐CH  P‐CH  BVDSS  RDSON (MAX.)  30V  ‐30V  21mΩ  35mΩ  ID  7.5A  ‐6A    UIS, Rg 100% Tested  Pb‐Free Lead Plating & Halogen Fr

Excelliance MOS
Excelliance MOS
datasheet pdf
2SD2103   Silicon NPN Triple Diffused

2SD2103 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 2.2 kΩ (Typ) 3 2SD2103 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter v

Hitachi Semiconductor
Hitachi Semiconductor
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2SK2103   Small switching (30V/ 2A)

Transistors Small switching (30V, 2A) 2SK2103 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimen

ROHM Semiconductor
ROHM Semiconductor
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3DD2103   CASE-RATED BIPOLAR TRANSISTOR

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2103 FOR LOW FREQUENCY R 3DD2103 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900 V 6A 0.5 V(max) 0.5 s(max) Package TO-3P(H)IS APPLICATIONS z z Switching power supply for color TV. z3DD2103 NPN FEATURES z 3DD2103 is high breakdown v

Jilin Sino
Jilin Sino
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[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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