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EMB2 PDF Datasheet

The EMB2 is PNP -100ma -50V Complex Digital Transistors. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
41 EMB2
PNP -100mA -50V Complex Digital Transistors

EMB2 / UMB2N / IMB2A PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Tr1 and Tr2 EMT6 (6) (1) (5) (4) UMT6 IC(MAX.) R1 R2 VCC -50V -100mA 47kW 47kW SMT6 (6) (1) (5) (4) (2) (3) (2) (3) EMB2 (SC-107C) (4) (5) UMB2N SOT-353 (SC-88) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 47kW. 2) Two DTA144E ch

ROHM Semiconductor
ROHM Semiconductor
pdf
40 EMB20D03H
Field Effect Transistor

    N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:    N‐CH  P‐CH  BVDSS  30V  ‐30V  RDSON (MAX.)  6.5mΩ  20mΩ  ID  26A  ‐15A    UIS, Rg 100% Tested  Pb‐Free Lead Plating & Halogen Free  ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CO

Excelliance MOS
Excelliance MOS
pdf
39 EMB20N03A
Field Effect Transistor

    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  D RDSON (MAX.)  20mΩ  ID  15A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  SYMBOL  Gate‐Source Voltage

Excelliance MOS
Excelliance MOS
pdf
38 EMB20N03G
Field Effect Transistor

    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  D RDSON (MAX.)  20mΩ  ID  9.5A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  SYMBOL  Gate‐Source Voltag

Excelliance MOS
Excelliance MOS
pdf
37 EMB20N03Q
Field Effect Transistor

    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  D RDSON (MAX.)  22mΩ  ID  6A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  SYMBOL  Gate‐Source Voltage

Excelliance MOS
Excelliance MOS
pdf
36 EMB20N03V
N-Channel Logic Level Enhancement Mode Field Effect Transistor

CHIPSET-IC.COM     N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  D RDSON (MAX.)  20mΩ  ID  12A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  SYMBOL  Gate�

Excelliance MOS
Excelliance MOS
pdf

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List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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