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EMB09P03H PDF Datasheet

The EMB09P03H is Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 EMB09P03H
Field Effect Transistor

    P‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  ‐30V  D RDSON (MAX.)  9.5mΩ  ID  ‐70A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  SYMBOL  EMB09P03H LI

Excelliance MOS
Excelliance MOS
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Recommended search results related to EMB09P03H

Part No Description ( Function) Manufacturers PDF
EMB09P03A   Field Effect Transistor

    P‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  ‐30V  D RDSON (MAX.)  9mΩ  ID  ‐75A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (T

Excelliance MOS
Excelliance MOS
datasheet pdf
EMB09P03V   Field Effect Transistor

    P‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  ‐30V  D RDSON (MAX.)  9.5mΩ  ID  ‐24A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS 

Excelliance MOS
Excelliance MOS
datasheet pdf
AGR09030E   Lateral MOSFET

AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global syst

TriQuint Semiconductor
TriQuint Semiconductor
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AP0903GH   N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP0903GH RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic D G S Description Advanced Power MOSFETs from APEC provide the designer with the bes

Advanced Power Electronics
Advanced Power Electronics
datasheet pdf
AP0903GH-HF   N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP0903GH-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 9mΩ 51A S Description

Advanced Power Electronics
Advanced Power Electronics
datasheet pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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