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Datasheet EMB Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 287 | EMB02K03HP | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V
RDSON (MAX.) 5.5mΩ
30V 2.6mΩ
D2 / S1
ID 50A 83A
D1
UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free |
 Excelliance MOS |
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| 286 | EMB02N03HR | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
1.7mΩ
ID
100A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Oth |
Excelliance MOS |
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| 285 | EMB02N03HS | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
2.5mΩ
ID
100A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Oth |
Excelliance MOS |
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| 284 | EMB02N60AB | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
4.0Ω
ID 2A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwi |
Excelliance MOS |
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| Número de pieza | Descripción | Fabricantes | |
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