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EM6604 PDF Datasheet

The EM6604 is Ultra Low Power Multi I/o MICrocontroller. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 EM6604
Ultra Low Power Multi I/O Microcontroller

EM MICROELECTRONIC - MARIN SA EM6604 Ultra Low Power Multi I/O Microcontroller Features • Low Power - typical 1.7µA active mode - typical 0.3µA standby mode @ 1.5V, 32kHz, 25°C • Low Voltage - 1.2 to 1.7V • buzzer - 2kHz • ROM - 1536×16bit (Mask Programmed) • RAM - 72 × 4bit (User Read/Write) • 2 clocks per instruction cycle • RISC architecture • 3 softwar

EM Microelectronic
EM Microelectronic
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Directional Couplers Mini, Octave Bandwidth V 3.00 2020 Series Features n n n n OUTLINE DRAWING Smallest and Lightest Couplers Available 0.5 through 18 GHz, including Wideband Units High Directivity - Low VSWR Meets MIL-E-5400 Environments Description These miniature couple

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2N6604 JAN, JTX, JTXV AVAILABLE CASE 303-01, STYLE 1 HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS (TA = 25°C Free Air Temperature) Rating Symbol Value Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Devi

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2SB166040ML 2SB166040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø Ø Ø Ø Ø 2SB166040ML is a schottky barrier diode chips Lb Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capabilit

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 6604 20V Complementary MOSFET Product Summary N-Channel VDS= 20V ID= 3.4A (VGS=4.5V) RDS(ON) < 65mΩ (VGS=4.5V) < 75mΩ (VGS=2.5V) < 100mΩ (VGS=1.8V) P-Channel -20V -2.5A (VGS=-4.5V) RDS(ON) < 75mΩ (VGS=-4.5V) < 105mΩ (

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[1]    

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