Datasheet EM567168 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	EM567168	2M x 16 Pseudo SRAM EtronTech Features • Organized as 2M words by 16 bits • Fast Cycle Time : 55ns, 70ns • Standby Current : 100uA • Deep power-down Current : 10uA (Memory cell data invalid) • Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15) • Compatible with low power SRAM • Single Power Supply Voltage :	Etron Technology

EM567 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
EM567169BC	2M x 16 Pseudo SRAM EtronTech Features • Organized as 2M words by 16 bits • Fast Cycle Time : 60/65/70/85ns • Fast Page Cycle Time : 18/20/25/30ns • Page Read Operation by 8 words • Standby Current(ISB1): 100uA • Deep power-down Current : 10uA (Memory cell data invalid) • Byte data con	Etron Technology
EM567168	2M x 16 Pseudo SRAM EtronTech Features • Organized as 2M words by 16 bits • Fast Cycle Time : 55ns, 70ns • Standby Current : 100uA • Deep power-down Current : 10uA (Memory cell data invalid) • Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15) • Compatible with low power SRAM • Single Po	Etron Technology

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Número de pieza	Descripción	Fabricantes	PDF
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