No | Part number | Description ( Function ) | Manufacturers | |
1 | EM512D16 | 512K x 16-Bit Ultra-Low Power Asynchronous SRAM NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM512D16 Advance Information EM512D16 512Kx16 bit Ultra-Low Power Asynchronous Static RAM Overview The EM512D16 is an integrated memory device containing a low power 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The base design is the s |
NanoAmp Solutions |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to EM512D16 |
Part No | Description ( Function) | Manufacturers | |
61LV51216 | IS61LV51216 IS61LV51216 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY ISSI MARCH 2005 ® FEATURES • High-speed access time: — 8, 10, and 12 ns • CMOS low power operation • Low stand-by power: — Less than 5 mA (typ.) CMOS stand-by • TTL |
Integrated Silicon Solution |
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AS6UA51216 | low power CMOS SRAM Advance Information June 2000 AS6UA51216 1.65V to 3.6V 512K×16 Intelliwatt™ low power CMOS SRAM with one chip enable Features • • • • • • • • AS6UA51216 Intelliwatt™ active power circuitry Industrial and commercial temperature ranges av |
Alliance Semiconductor |
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CLMU51216 | Limiters Limiters 一落 FEATURES: Coverage From 0.1 to 65.0 GHz (Octave/Multioctave) Up to 2 Watt CW and 150W Peak (1 µsec) Power Handling Capability Fast Response and Short Recovery Time (10 to 20 µsec typical) Compact/Rugged Thin-Film Construction |
CERNEX |
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HYB18L512160BF-7.5 | DRAMs for Mobile Applications 512-Mbit Mobile-RAM December 2006 HYB18L512160BF-7.5 HYE18L512160BF-7.5 DRAMs for Mobile Applications 512-Mbit Mobile-RAM RoHS compliant Data S heet Rev. 1.22 Data Sheet. HY[B/E]18L512160BF-7.5 512-Mbit Mobile-RAM HYB18L512160BF-7.5, HYE18L512160BF-7.5 R |
Qimonda AG |
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HYB18T512160A | 512-Mbit Double-Data-Rate-Two SDRAM D a t a S h e e t , Rev. 1.13, M a i 2 00 4 HYB18T512[400/800/160]AC–[3.7/5] HYB18T512[400/800/160]AF–[3.7/5] 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . The information in this document is subject to cha |
Infineon Technologies AG |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |