No | Part number | Description ( Function ) | Manufacturers | |
1 | EIC7179-4 | Internally Matched Power FET EIC7179-4 UPDATED 08/21/2007 7.10-7.90GHz 4-Watt Internally-Matched Power FET FEATURES • • • • • • • 7.10–7.90GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 35% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH ELE |
Excelics Semiconductor |
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Recommended search results related to EIC7179-4 |
Part No | Description ( Function) | Manufacturers | |
EIC7179-12 | Internally Matched Power FET EIC7179-12 ISSUED 02/29/2008 7.10-7.90 GHz 12-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES • • • • • • • • 7.10– 7.90GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 dBm Output Power at 1dB Compression 9.0 |
Excelics Semiconductor |
|
EIC7179-5 | Internally Matched Power FET EIC7179-5 UPDATED 08/21/2007 7.10-7.90GHz 5-Watt Internally-Matched Power FET FEATURES • • • • • • • 7.10–7.90GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compress |
Excelics Semiconductor |
|
EIC7179-8 | Internally Matched Power FET EIC7179-8 7.10-7.90 GHz 8-Watt Internally-Matched Power FET Issued Date: 06-22-04 FEATURES • • • • • • • • 7.10 – 7.90 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 9 dB Power Gain at 1dB |
Excelics Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |