No | Part number | Description ( Function ) | Manufacturers | |
1 | EEEHA1A221P | Aluminum Electrolytic Capacitors Aluminum Electrolytic Capacitors/ HA Surface Mount Type Series: HA Type: V ■ Features ● Endurance: 105 °C 1000 h ● Vibration-proof product is available upon request. (08 mm and larger) ● AEC-Q200 qualified✽ ● RoHS directive compliant Hight-temperature assuranceize HA ↑ S ■ Specifications Category Temp. Range –40 °C to +105 °C Rated W.V. Range 6.3 V. |
Panasonic |
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Recommended search results related to EEEHA1A221P |
Part No | Description ( Function) | Manufacturers | |
EEEHA1A221XP | Aluminum Electrolytic Capacitors Aluminum Electrolytic Capacitors/ HA Surface Mount Type Series: HA Type: V ■ Features ● Endurance: 105 °C 1000 h ● Vibration-proof product is available upon request. (08 mm and larger) ● AEC-Q200 qualified✽ ● RoHS directive compliant Hight-temperature assuranceize |
Panasonic |
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2SA1221 | PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS DATA SHEET SILICON TRANSISTORS 2SA1221, 1222 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES • Ideal for use of high withstanding voltage current such as TV vertical deflection output, audio output, and variable power supplies. • Complementary |
NEC |
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2SB1221 | Silicon PNP Epitaxial Transistor Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 Unit: mm 5.0±0.2 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. s Absolute Maximum Ratings Parameter Collector |
Panasonic Semiconductor |
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2SB1221 | Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification) Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 Unit: mm 5.0±0.2 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. s Absolute Maximum Ratings Parameter Collector |
Panasonic Semiconductor |
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2SD1221 | Silicon NPN Diffused Type Transistor TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process) 2SD1221 2SD1221 Audio Frequency Power Amplifier Application Unit: mm • Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) • High power dissipation: PC = 20 W (Tc = 25°C) • Comple |
Toshiba Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |