No | Part number | Description ( Function ) | Manufacturers | |
1 | EEE1AA221P | (EEExxxx) Aluminum Electrolytic Capacitors ( DataSheet : ) Aluminum Electrolytic Capacitors/ S Surface Mount Type Series: S Type : V n Features Endurance: 85°C 2000 h 5.4 mm (<= φ6.3) height, RoHS directive compliant n Specifications Country of Origin Japan Malaysia (φ4, φ5, φ6.3, φ8, φ10) Category temp. range Rated W.V. Range -40 to + 85°C 4 to 100 V .DC Nominal Cap. Range 0.1 to 1500 |
Panasonic |
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Recommended search results related to EEE1AA221P |
Part No | Description ( Function) | Manufacturers | |
EEE1AA221XP | (EEExxxx) Aluminum Electrolytic Capacitors ( DataSheet : ) Aluminum Electrolytic Capacitors/ S Surface Mount Type Series: S Type : V n Features Endurance: 85°C 2000 h 5.4 mm (<= φ6.3) height, RoHS directive compliant n Specifications Country of Origin Japan Malaysia (φ4, φ5, φ6.3, φ8, φ10) C |
Panasonic |
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2SA1221 | PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS DATA SHEET SILICON TRANSISTORS 2SA1221, 1222 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES • Ideal for use of high withstanding voltage current such as TV vertical deflection output, audio output, and variable power supplies. • Complementary |
NEC |
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2SB1221 | Silicon PNP Epitaxial Transistor Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 Unit: mm 5.0±0.2 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. s Absolute Maximum Ratings Parameter Collector |
Panasonic Semiconductor |
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2SB1221 | Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification) Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 Unit: mm 5.0±0.2 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. s Absolute Maximum Ratings Parameter Collector |
Panasonic Semiconductor |
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2SD1221 | Silicon NPN Diffused Type Transistor TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process) 2SD1221 2SD1221 Audio Frequency Power Amplifier Application Unit: mm • Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) • High power dissipation: PC = 20 W (Tc = 25°C) • Comple |
Toshiba Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |