No | Part number | Description ( Function ) | Manufacturers | |
2 | EDS2532EEBH-75 | 256M bits SDRAM PRELIMINARY DATA SHEET 256M bits SDRAM EDS2532EEBH-75 (8M words × 32 bits) Description The EDS2532EEBH is a 256M bits SDRAM organized as 2,097,152 words × 32 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock. It is packaged in 90-ball FBGA. Pin Configurations /xxx indicate active low signal. 90-ball FBGA 1 2 3 |
Elpida Memory |
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1 | EDS2532EEBH-75TT | 256M bits SDRAM WTR DATA SHEET 256M bits SDRAM WTR (Wide Temperature Range) EDS2532EEBH-75TT (8M words × 32 bits) Specifications • Density: 256M bits • Organization 2M words × 32 bits × 4 banks • Package: 90-ball FBGA Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Clock frequency: 133MHz (max.) • 2KB page size Row address: A0 |
Elpida Memory |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |