No | Part number | Description ( Function ) | Manufacturers | |
1 | EDE1104AASE | (EDE1104AASE / EDE1108AASE) 1G bits DDR2 SDRAM organized DATA SHEET 1G bits DDR2 SDRAM EDE1104AASE (256M words × 4 bits) EDE1108AASE (128M words × 8 bits) Description The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (µBGA) package. Feature |
Elpida Memory |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to EDE1104AASE |
Part No | Description ( Function) | Manufacturers | |
1104A | Diode ( Rectifier ) |
American Microsemiconductor |
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1104B | Diode ( Rectifier ) |
American Microsemiconductor |
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1104C | Diode ( Rectifier ) |
American Microsemiconductor |
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1104D | Diode ( Rectifier ) |
American Microsemiconductor |
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1104E | Diode ( Rectifier ) |
American Microsemiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |