No | Part number | Description ( Function ) | Manufacturers | |
1 | ECH8605 | Ultrahigh Speed Switching Applications Ordering number : ENN7405 ECH8605 P-Channel Silicon MOSFET ECH8605 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2206A [ECH8605] 0.25 0.3 8 5 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 2.3 0.65 2.9 Top View 0.25 1 4 2.8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to- |
Sanyo Semiconductor Corporation |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
ACT8605 | Radiation Hardened 50 Watt Power Supply Module ACT 861X Series Radiation Hardened 50 Watt Power Supply Module Features s Advanced CIRCUIT TECHNOLOGY www.aeroflex.com Radiation Environment q q Total Dose 100K Rad (Si) No SEE or SEU to 20 MeV/cm2/mg to Baseplate Mounting Temperature 50W Power Output, +5V, +12V, +15V, -12V a |
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AD8605 | Input/Output Operational Amplifiers Data Sheet Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES Low offset voltage: 65 μV maximum Low input bias currents: 1 pA maximum Low noise: 8 nV/√Hz Wide bandwidth: 10 MHz High open-loop gain: 1000 V/mV Unity gain |
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AY-3-8605 | Warfare
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General Semiconductor |
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ECH8601 | General-Purpose Switching Device Applications Ordering number : ENN7288B ECH8601 N-Channel Silicon MOSFET ECH8601 Features • • • • General-Purpose Switching Device Applications Low ON-resistance. Suitable for lithim-ion battery use. Drain common specification. 2.5V drive. Specifications Abso |
Sanyo Semicon Device |
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ECH8601M | N-Channel Silicon MOSFET Ordering number : ENA1174 ECH8601M SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8601M General-Purpose Switching Device Applications Features • Low ON-resistance. • Built-in gate protection resistor. • 2.5V drive. • Best suited for LiB charging and discha |
Sanyo |
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