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ECEP2EP332HX PDF Datasheet

The ECEP2EP332HX is Large Can Aluminum ElectrolytIC Capacitors. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 ECEP2EP332HX
Large Can Aluminum Electrolytic Capacitors

Large Can Aluminum Electrolytic Capacitors T-UP Series 85°C, 3000 hours 4 or 5 terminal mounting provides stability and keyed polarity Extended CV ratings Endurance rating of 3000 hours at 85°C Can vent construction Rated Working Voltage: Operating Temperature: Nominal Capacitance: Leakage Current: Ripple Current Multipliers: 16 ~ 250 VDC -40 ~ +85°C 1200 ~ 270000µF (±2

Panasonic
Panasonic
pdf

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Part No Description ( Function) Manufacturers PDF
ECEP2EP332HA   Large Can Aluminum Electrolytic Capacitors

Large Can Aluminum Electrolytic Capacitors T-UP Series 85°C, 3000 hours 4 or 5 terminal mounting provides stability and keyed polarity Extended CV ratings Endurance rating of 3000 hours at 85°C Can vent construction Rated Working Voltage: Operating Temperature: Nominal Capac

Panasonic
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2332   STATlC READ ONLY MEMORY

, . .commodore ~ aamicanduct;ar group ~UYAJ@@ MPS 2332 STATIC READ ONLY MEMORY (4096x8) C .__233_2_S_TA_Tl_C_REA_D_ON_LY_ME_M__O_RY_(40_96_xB_)_ _----I DESCRIPTION The 2332 high performance read only memory is organized 4096 words by 8 bits with access times of less than 350 n

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79RC32332    IDT79RC32332

IDT79RC32334 and IDT79RC32332 Integrated Communications Processors (Y Revision) RISCore™ 32300 Family w w User Reference Manual w .D at June 2002 aS he et 2975 Stender Way, Santa Clara, California 95054 Telephone: (800) 345-7015 • TWX: 910-338

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ALN2332   Internally Matched LNA Module

plerowTM ALN2332 Internally Matched LNA Module Description The plerowTM ALN-series is the compactly designed surface-mount module for the use of the LNA with or without the following gain blocks in the infrastructure equipment of the mobile wireless (CDMA, GS

Advanced Semiconductor
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