No | Part number | Description ( Function ) | Manufacturers | |
1 | ECEG2EU123C | Aluminium Electrolytic Capacitors Aluminium Electrolytic Capacitors/GYU Screw Terminal Type Series:GYU n Features Endurance : +85°C 2000 h n Recommended Applications n Specifications Category temp. range Rated W.V. Range Nominal Cap. Range Capacitance Tolerance DC Leakage Current Dissipation Factor Discontinued Japan U.S.A. -40 to + 85°C 10 to 100 V .DC 5600 to 1000000 µ F -25 to + 85°C 160 to 250 V .DC 1 |
Panasonic |
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Recommended search results related to ECEG2EU123C |
Part No | Description ( Function) | Manufacturers | |
2SC2123 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2123 DESCRIPTION ·With TO-3 package ·Short switching times. ·High dielectric strength. APPLICATIONS ·For use in TV horizontal deflection stage PINNING(see fig.2) PIN 1 2 3 Ba |
SavantIC |
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2SD2123 | Silicon NPN Epitaxial 2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum |
Hitachi Semiconductor |
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2SD2123L | Silicon NPN Epitaxial 2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum |
Hitachi Semiconductor |
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2SD2123S | Silicon NPN Epitaxial 2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum |
Hitachi Semiconductor |
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2SK2123 | Silicon N-Channel Power F-MOS FET Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Applications 4.1±0.2 |
Panasonic Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |