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ECEC1JA152DL PDF Datasheet

The ECEC1JA152DL is Aluminum ElectrolytIC Capacitors. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 ECEC1JA152DL
Aluminum Electrolytic Capacitors

Panasonic Industrial Company Aluminum Electrolytic Capacitors TS-HA/HB Series 105°C, 3000 hours Long 3000 hour life at 105°C with high ripple current capability 2 and 3 pin versions available Can vent construction Rated Working Voltage: Operating Temperature: Nominal Capacitance: Capacitance Tolerance: Dissipation Factor: (120 Hz, +20°C) Leakage Current: Ripple Current M

Panasonic Semiconductor
Panasonic Semiconductor
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Part No Description ( Function) Manufacturers PDF
ECEC1JA152BA   Aluminum Electrolytic Capacitors

Panasonic Industrial Company Aluminum Electrolytic Capacitors TS-HA/HB Series 105°C, 3000 hours Long 3000 hour life at 105°C with high ripple current capability 2 and 3 pin versions available Can vent construction Rated Working Voltage: Operating Temperature: Nominal Capaci

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2SB1152   Silicon PNP Power Transistors

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB1152 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power applications ABSOLU

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2SK1152   Silicon N-Channel MOS FET

2SK1151(L)(S), 2SK1152(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1

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2SK1152L   Silicon N-Channel MOS FET

2SK1151(L)(S), 2SK1152(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1

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2SK1152S   Silicon N-Channel MOS FET

2SK1151(L)(S), 2SK1152(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1

Hitachi Semiconductor
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[1]    

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