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DS3152 PDF Datasheet

The DS3152 is Single/dual/triple/quad Ds3/e3/sts-1 Lius. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 DS3152
Single/Dual/Triple/Quad DS3/E3/STS-1 LIUs

DEMO KIT AVAILABLE www.maxim-ic.com DS3151/DS3152/DS3153/DS3154 Single/Dual/Triple/Quad DS3/E3/STS-1 LIUs GENERAL DESCRIPTION The DS3151 (single), DS3152 (dual), DS3153 (triple), and DS3154 (quad) line interface units (LIUs) perform the functions necessary for interfacing at the physical layer to DS3, E3, or STS-1 lines. Each LIU has independent receive and transmit paths an

Maxim Integrated
Maxim Integrated
pdf

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Recommended search results related to DS3152

Part No Description ( Function) Manufacturers PDF
2SC3152   NPN Triple Diffused Planar Silicon Transistor

Ordering number:EN1071D NPN Triple Diffused Planar Silicon Transistor 2SC3152 800V/3A Switching Regulator Applications Features · High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3152] Specifications Absolute M

Sanyo Semicon Device
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2SC3152   SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3152 DESCRIPTION ·With TO-3PN package ·High breakdown voltage (VCBO 900V) ·Fast switching speed ·Wide ASO Safe Operating Area APPLICATIONS ·800V/3A Switching Regulator Appli

SavantIC
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2SK3152   Silicon N Channel MOS FET High Speed Power Switching

2SK3152 Silicon N Channel MOS FET High Speed Power Switching ADE-208-732 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 1 2 S 1. Gate

Hitachi Semiconductor
Hitachi Semiconductor
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2SK3152   Silicon N Channel MOS FET

2SK3152 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1077-0200 (Previous: ADE-208-732) Rev.2.00 Sep 07, 2005 RENESAS Package

Renesas
Renesas
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3152V   SI3152V

qSI-3000V Series SI-3000V Series 3-Terminal, Low Dropout Voltage Dropper Type sFeatures • • • • TO-3P package 3-terminal regulator Output current: 2.0A Low dropout voltage: VDIF≤1V (at IO=2.0A) Built-in foldback overcurrent protection circuit sAp

Sanken electric
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[1]    

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Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
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This is a popular adjustable voltage regulator.
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On Semiconductor
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