No | Part number | Description ( Function ) | Manufacturers | |
1 | DS2703 | SHA-1 Battery Pack Authentication IC DS2703 SHA-1 Battery Pack Authentication IC www.maxim-ic.com GENERAL DESCRIPTION The DS2703 provides a robust cryptographic solution to ensure the authenticity of Li-Ion battery packs for cell phone, PDA, and portable computing devices. The DS2703 employs the Secure Hash Algorithm (SHA-1) specified in the Federal Information publication 180-1 and 180-2, an |
Dallas Semiconductor |
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Recommended search results related to DS2703 |
Part No | Description ( Function) | Manufacturers | |
2SC2703 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2703 Audio Power Amplifier Applications 2SC2703 Unit: mm • High DC current gain: hFE = 100 to 320 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltag |
Toshiba Semiconductor |
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2SC2703 | Silicon NPN transistor 2SC2703(BR3DG2703L) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92LM 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92LM Plastic Package. 特征 / Features 直流增益高:hFE=100~320。 High DC current gain: hFE=100~320. 用途 / Applications |
BLUE ROCKET ELECTRONICS |
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2SD2703 | General purpose amplification 2SD2703 Transistors General purpose amplification (30V, 1A) 2SD2703 zApplication Low frequency amplifier zExternal dimensions (Unit : mm) (2) 0~0.1 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≦ 350mV At IC = 500mA / IB = 25mA |
ROHM Semiconductor |
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2SK2703 | MOSFET ( Transistor ) 2SK2703 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ± 10 ± 40 75 (Tc = 25ºC) 300 10 150 –55 to +150 (Ta = 25ºC) External dimensions 2 ...... FM100 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS A A W mJ A º |
Sanken electric |
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AUIRLR2703 | Power MOSFET ( Transistor ) AUTOMOTIVEGRADE PD - 97620 AUIRLR2703 • Advanced Planar Technology • Logic-Level Gate Drive • Low On-Resistance • Dynamic dV/dT Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax • Lead-Fre |
International Rectifier |
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Vishay |
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ON Semiconductor |
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