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DMTH6004SCTBQ PDF Datasheet

The DMTH6004SCTBQ is N-channel Enhancement Mode MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 DMTH6004SCTBQ
N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT Green DMTH6004SCTBQ 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS 60V RDS(ON) Max 3.4mΩ @ VGS = 10V ID TC = +25°C (Note 10) 100A Description and Applications This MOSFET has been designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: �

Diodes
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Recommended search results related to DMTH6004SCTBQ

Part No Description ( Function) Manufacturers PDF
DMTH6004LPS   N-CHANNEL ENHANCEMENT MODE MOSFET

A D VNAEN CWEPDRIONDFUOCRTM A T I O N Green DMTH6004LPS 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features BVDSS 60V RDS(ON) Max 3.1mΩ @ VGS = 10V 4.5mΩ @ VGS = 4.5V ID TC = +25°C (Note 8) 100A 100A  Rated to +175°C – Ideal for High A

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DMTH6004SCT   N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary BVDSS 60V RDS(ON) Max 3.65mΩ @ VGS = 10V DMTH6004SCT 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET ID TC = +25°C (Note 9) 100A Features  Low Input Capacitance  Low Input/Output Leakage  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and

Diodes
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DMTH6004SCTB   N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT Green DMTH6004SCTB 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 3.4mΩ @ VGS = 10V ID TC = +25°C (Note 9) 100A Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high

Diodes
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DMTH6004SK3   N-CHANNEL ENHANCEMENT MODE MOSFET

Green DMTH6004SK3 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 3.8mΩ @ VGS = 10V ID Max TC = +25°C (Note 9) 100A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching perfor

Diodes
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DMTH6004SK3Q   N-CHANNEL ENHANCEMENT MODE MOSFET

A D V A N C E DNIEN FWOPRRMOADT IU COTN Green DMTH6004SK3Q 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max QG Typ 3.8mΩ @ VGS = 10V 95.4nC ID Max TC = +25°C (Note 10) 100A Features  Rated to +175°C – Ideal for High Ambient Tempe

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[1]    

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