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Datasheet DMT6009LSS Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 DMT6009LSS   N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCE INNEFWORPRMOADTIUOCNT DMT6009LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) max 9.5mΩ @ VGS = 10V 12mΩ @ VGS = 4.5V ID max TA = +25°C 10.8A 9.6 Features and Benefits  100% Unclamped Inductive Switch (UIS) Test in Production  High Conversion Effic
 Diodes
Diodes		 datasheet DMT6009LSS pdf

DMT6009 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
DMT6009LSS

N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCE INNEFWORPRMOADTIUOCNT DMT6009LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) max 9.5mΩ @ VGS = 10V 12mΩ @ VGS = 4.5V ID max TA = +25°C 10.8A 9.6 Features and Benefits  100% Unclamped Inductive Switch (UIS) Test in Production  H
 Diodes
Diodes		 datasheet pdf - Diodes
DMT6009LK3

N-CHANNEL ENHANCEMENT MODE MOSFET

ADAVDAVNACNECDE IDNIFNOFRORMAMTAITOINON DMT6009LK3 Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 10mΩ @ VGS = 10V 12.8mΩ @ VGS = 4.5V ID Max TC = +25°C 57A 51A Features  Low RDS(ON) – Ensures On State Losses Are Minimized  Ex
 Diodes
Diodes		 datasheet pdf - Diodes
DMT6009LFG

N-CHANNEL ENHANCEMENT MODE MOSFET

ADVNAENWCEP IRNNOEFDWOURPCRTMOADTIUOCNT Product Summary V(BR)DSS 60V RDS(ON) Max 10mΩ @ VGS = 10V 11.7mΩ @ VGS = 4.5V ID Max TC = +25°C 34A 31.5A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performan
 Diodes
Diodes		 datasheet pdf - Diodes


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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