No | Part number | Description ( Function ) | Manufacturers | |
1 | DMT3006LFDF | N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION DMT3006LFDF N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 7mΩ @ VGS = 10V 10mΩ @ VGS = 4.5V 15mΩ @ VGS = 3.7V ID Max TA = +25°C 14.1A 11.8A 9.6A Features 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Fast Switching Speed Totally Lead-Free & Ful |
Diodes |
0  1  2  3  4  5  6  7  8 9 |
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DMT3006LDK | N-CHANNEL ENHANCEMENT MODE MOSFET ADAVDAAVDNAVCNAECNDECIDENI IFNNNOFEFROWORMRPAMRMTAIOATOIDTINOUONCNT DMT3006LDK N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary VDSS 30V RDS(ON) max 6.5mΩ @ VGS = 10V 10mΩ @ VGS = 4.5V ID max TC = +25°C 46.2 A 37.0 A Description This MOSFET is designed to minimize the |
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DMT3006LFG | N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) Max 6mΩ @ VGS = 10V 10mΩ @ VGS = 4.5V ID Max TC = +25°C 55.6A DMT3006LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Features and Benefits Low RDS(ON) – Ensures On-State Losses are Minimized Excellent QGD × RDS(ON) Prod |
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DMT3006LPS | N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INNEFWORPRMOADTIUOCNT Product Summary V(BR)DSS 30V RDS(ON) max 6mΩ @ VGS = 10V 9.8mΩ @ VGS = 4.5V ID max TC = +25°C 65A 55A DMT3006LPS Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits Low RDS(ON) – Minimizes On-State Losses Excelle |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
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