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DMT2004UFG PDF Datasheet

The DMT2004UFG is N-channel Enhancement Mode MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 DMT2004UFG
N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary BVDSS 24V RDS(ON) max 5.0mΩ @ VGS = 10V 6.5mΩ @ VGS = 4.5V 10.0mΩ @ VGS = 2.5V ID max TC = +25°C 70A 60A 45A DMT2004UFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits  Low RDS(ON) – ensures on state losses are minimized  Small form factor thermally efficient package enables higher density end products  Occupies just 33% of

Diodes
Diodes
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Recommended search results related to DMT2004UFG

Part No Description ( Function) Manufacturers PDF
DMT2004UFDF   N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCED INFORMATION DMT2004UFDF N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS 24V RDS(ON) Max 6.0mΩ @ VGS = 10V 7.2mΩ @ VGS = 4.5V 12.5mΩ @ VGS = 2.5V Description ID Max TA = +25°C 14.1A 12.9A 9.8A  0.6mm Profile – Ideal for Low Profile App

Diodes
Diodes
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DMT2004UPS   N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary BVDSS 24V RDS(ON) max 5mΩ @ VGS = 10V 6.5mΩ @ VGS = 4.5V 10mΩ @ VGS = 2.5V ID max TC = +25°C 80A 70A 55A DMT2004UPS Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits  Low RDS(ON) – Minimizes On-State Losses  Excellent Qgd x R

Diodes
Diodes
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2SA2004   Silicon PNP Epitaxial Transistor

Power Transistors 2SA2004 Silicon PNP epitaxial planer type Unit: mm For power amplification 9.9±0.3 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric b

Panasonic Semiconductor
Panasonic Semiconductor
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2SK2004-01L   N-channel MOS-FET

2SK2004-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 1000V 3,6Ω 4A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC

Fuji Electric
Fuji Electric
datasheet pdf
2SK2004-01S   N-channel MOS-FET

2SK2004-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 1000V 3,6Ω 4A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC

Fuji Electric
Fuji Electric
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[1]    

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