Datasheet DMP6110SSSQ Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	DMP6110SSSQ	P-CHANNEL ENHANCEMENT MODE MOSFET NEW PNREOWDUPCRTODUCT DMP6110SSSQ 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -60V RDS(ON) max 110mΩ @ VGS = -10V 130mΩ @ VGS = -4.5V ID max TA = +25°C -4.5A -4.2A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and	Diodes

DMP6110S Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
DMP6110SVT	P-CHANNEL ENHANCEMENT MODE MOSFET NEW PNREOWDPURCOTDUCT DMP6110SVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -60V RDS(ON) Max 105m @ VGS = -10V 130m @ VGS = -4.5V ID Max TC = +25°C -7.3A -6.5A Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Sp	Diodes
DMP6110SSSQ	P-CHANNEL ENHANCEMENT MODE MOSFET NEW PNREOWDUPCRTODUCT DMP6110SSSQ 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -60V RDS(ON) max 110mΩ @ VGS = -10V 130mΩ @ VGS = -4.5V ID max TA = +25°C -4.5A -4.2A Description and Applications This MOSFET has been designed to minimize the on-state resis	Diodes
DMP6110SSS	P-CHANNEL ENHANCEMENT MODE MOSFET NEW PNREOWDUPCRTODUCT DMP6110SSS 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -60V RDS(ON) max 110mΩ @ VGS = -10V 130mΩ @ VGS = -4.5V ID max TA = +25°C -4.5A -4.2A Description and Applications This MOSFET has been designed to minimize the on-state res	Diodes

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Número de pieza	Descripción	Fabricantes	PDF
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