No | Part number | Description ( Function ) | Manufacturers | |
1 | DMP3085LSS | P-CHANNEL ENHANCEMENT MODE MOSFET DMP3085LSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -30V RDS(ON) MAX 70mΩ @VGS = -10V 95mΩ @VGS = -4.5V Package SO-8 ID TA = +25°C -3.8A -3.2A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. App |
Diodes |
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DMP3085LSD | P-CHANNEL ENHANCEMENT MODE MOSFET DMP3085LSD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -30V RDS(ON) MAX 70mΩ @VGS = -10V 95mΩ @VGS = -4.5V Package SO-8 ID TA = +25°C -3.9A -3.3A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain sup |
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1N3085 | HIGH POWER RECTFIERS 1N3085-1N3092, 1N3111, 1N5162 High-reliability discrete products and engineering services since 1977 HIGH POWER RECTFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as no |
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2SC3085 | Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3085 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 500V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAX |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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