No | Part number | Description ( Function ) | Manufacturers | |
1 | DMP2035UTS | DUAL P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Features • Dual P-Channel MOSFET • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • ESD Protected up to 3kV • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability DMP2035UTS DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data � |
Diodes |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to DMP2035UTS |
Part No | Description ( Function) | Manufacturers | |
DMP2035U | P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 3KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualif |
Diodes |
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DMP2035UFCL | P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION DMP2035UFCL 20V P-CHANNEL ENHANCEMENT MODE MOSFET Summary VDSS -20V RDS(ON) max 24mΩ @VGS = -4.5V 31mΩ @VGS = -2.5V ID max TA = +25°C -6.6 A -5.8 A Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and ye |
Diodes |
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DMP2035UFDF | P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -20V RDS(ON) Max 29mΩ @ VGS = -4.5V 39mΩ @ VGS = -2.5V ID Max TA = +25°C -6.9A -5.9A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal |
Diodes |
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DMP2035UVT | P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -20V RDS(on) max 35mΩ @ VGS = -4.5V 45mΩ @ VGS = -2.5V ID TA = 25°C -6.0A -5.2A DMP2035UVT -20V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits • Low Input Capacitance • Low On-Resistance • Fast Switching Speed • ESD protected Up To |
Diodes |
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DMP2035UVTQ | P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT DMP2035UVTQ 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -20V RDS(on) max 35mΩ @ VGS = -4.5V 45mΩ @ VGS = -2.5V ID TA = +25°C -6.0A -5.2A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) |
Diodes |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |