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DMN65D8LDW PDF Datasheet

The DMN65D8LDW is Dual N-channel Enhancement Mode Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 DMN65D8LDW
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

NEW PRODUCT DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(ON) 8Ω @ VGS = 5V 6Ω @ VGS = 10V Package SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management

Diodes
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Recommended search results related to DMN65D8LDW

Part No Description ( Function) Manufacturers PDF
DMN65D8L   N-CHANNEL ENHANCEMENT MODE MOSFET

DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(ON) 3Ω @ VGS = 10V 4Ω @ VGS = 5V Package ID TA = +25°C 310mA 270mA Features • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Spe

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DMN65D8LFB   N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

NEW PRODUCT DMN65D8LFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary V(BR)DSS 60V RDS(ON) 3.0Ω @ VGS = 10V 4.0Ω @ VGS = 5V ID TA = +25°C 400mA 330mA Features and Benefits  N-Channel MOSFET  Low On-Resistance  Low Gate-Threshold Voltage  Low-Input

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DMN65D8LQ   N-CHANNEL ENHANCEMENT MODE MOSFET

DMN65D8LQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(ON) 3Ω @ VGS = 10V 4Ω @ VGS = 5V Package SOT23 ID TA = +25°C 310mA 270mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior

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DMN65D8LW   N-CHANNEL ENHANCEMENT MODE MOSFET

DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(ON) 3Ω @ VGS = 10V 4Ω @ VGS = 5V Package SOT323 ID TA = +25°C 300mA 260mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain

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1165892   High power NPN silicon power transistors

1165892 High power NPN silicon power transistors. These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features: • Forward biased second breakdown current capability IS/b = 2.5 A dc at VCE = 60V dc. • Pb-free package

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