Datasheet DMN63D1LW Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	DMN63D1LW	N-CHANNEL ENHANCEMENT MODE MOSFET A D VNA EN CWEPDRINONEDFWUOCRPTRMOADT IUOCNT Product Summary V(BR)DSS 60V RDS(ON) max 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it idea	Diodes

DMN63D Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
DMN63D8LDW	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DMN63D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) 4.2Ω @ VGS = 4.5V 2.8Ω @ VGS = 10V ID TA = 25°C 200mA 260mA Features • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Input Capacitance Fast Switching Spee	Diodes Incorporated
DMN63D8L	N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRNOEDWUCPTRODUCT Product Summary V(BR)DSS 30V RDS(ON) max 2.8Ω @ VGS = 10V 3.8Ω @ VGS = 5V ID max TA = +25°C 350mA 300mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ide	Diodes
DMN63D1LDW	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DMN63D1LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRNOEDWUCPTRODUCT Product Summary V(BR)DSS 60V RDS(ON) max 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 250mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain supe	Diodes

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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