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DMN62D0UDW PDF Datasheet

The DMN62D0UDW is Dual N-channel Enhancement Mode MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 DMN62D0UDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRNOEDWUCPTRODUCT DMN62D0UDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(ON) max 2Ω @ VGS = 4.5V 2.5Ω @ VGS = 2.5V ID max TA = +25°C 350mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

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Recommended search results related to DMN62D0UDW

Part No Description ( Function) Manufacturers PDF
DMN62D0LFB   N-CHANNEL ENHANCEMENT MODE MOSFET

DMN62D0LFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) 2Ω @ VGS = 4V ID TA = 25°C 100mA 50mA Features and Benefits • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Lead

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DMN62D0LFD   N-CHANNEL ENHANCEMENT MODE MOSFET

ANDEVNAWENPWCREPOIRDNOUFDCOUTRC TM A T I O N Product Summary V(BR)DSS 60V RDS(ON) 2Ω @ VGS = 4V 2.5Ω @ VGS = 2.5V ID TA = +25°C 310mA 295mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior sw

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DMN62D0SFD   N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

NEW PRODUCT Product Summary V(BR)DSS 60V RDS(ON) 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID TA = 25°C 540mA 430mA Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance

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DMN62D0U   N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRNOEDWUCPTRODUCT Product Summary V(BR)DSS 60V RDS(ON) max 2Ω @ VGS = 4.5V 2.5Ω @ VGS = 2.5V ID max TA = +25°C 380mA 340mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it id

Diodes
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DMN62D0UW   N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT Product Summary BVDSS 60V RDS(ON) max 2Ω @ VGS = 4.5V 2.5Ω @ VGS = 2.5V ID max TA = +25°C 340mA 300mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high

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