No | Part number | Description ( Function ) | Manufacturers | |
1 | DMN6040SSDQ | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION DMN6040SSDQ 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(ON) Max 40mΩ @ VGS = 10V 55mΩ @ VGS = 4.5V ID TA = +25°C 5.0A 4.4A Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficienc |
Diodes |
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Part No | Description ( Function) | Manufacturers | |
DMN6040SFDE | N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary V(BR)DSS RDS(ON) max Package 60V 38mΩ @ VGS = 10V U-DFN2020-6 47mΩ @ VGS = 4.5V Type E ID max TA = +25°C 6.5A 5.2A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maint |
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DMN6040SK3 | 60V N-CHANNEL ENHANCEMENT MODE MOSFET DMN6040SK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(on) max 40mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V ID TC = +25°C 20A 16A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superi |
Diodes Incorporated |
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DMN6040SSD | 60V, 5A, DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary V(BR)DSS 60V RDS(on) max 40mΩ @ VGS = 10V 55mΩ @ VGS = 4.5V DMN6040SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ID TA = +25°C 5.0A 4.4A Features and Benefits • Low Input Capacitance • Low On-Resistance • Fast Switching Speed � |
Diodes |
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DMN6040SSS | N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INNEFWORPRMOADTIUOCNT DMN6040SSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(ON) max 40mΩ @ VGS = 10V 55mΩ @ VGS = 4.5V ID max TA = 25°C 5.5A 4.7A Description and Applications This MOSFET has been designed to minimize the on-state resista |
Diodes |
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DMN6040SVT | N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION DMN6040SVT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(on) max 44mΩ @ VGS = 10V 60mΩ @ VGS = 4.5V ID TA = 25°C 5.0A 4.3A Description and Applications This new generation MOSFET has been designed to minimize the onstate resis |
Diodes |
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Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |