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DMN601K PDF Datasheet

The DMN601K is N-channel Enhancement Mode Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 DMN601K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Lead-free Green DMN601K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4) E G TOP VIEW

Diodes Incorporated
Diodes Incorporated
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Recommended search results related to DMN601K

Part No Description ( Function) Manufacturers PDF
DMN6013LFG   N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION DMN6013LFG 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 60V RDS(ON) max 13mΩ @ VGS = 10V 18mΩ @ VGS = 4.5V ID max TA = +25°C 10.3A 8.8A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON))

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DMN6013LFGQ   60V N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION DMN6013LFGQ 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary BVDSS 60V RDS(ON) max 13m @ VGS = 10V 18m @ VGS = 4.5V ID max TA = +25°C 10.3A 8.8A Description and Applications This MOSFET is designed to meet the stringent requirements o

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DMN601DMK   DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT Product Summary V(BR)DSS 60V RDS(ON) Max 2.4Ω @ VGS = 10V 4.0Ω @ VGS = 4V ID Max TA = 25°C 510mA 390mA Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performa

Diodes Incorporated
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DMN601DWK   DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN601DWK Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low

Diodes Incorporated
Diodes Incorporated
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DMN601TK   N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Lead-free Green DMN601TK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lea

Diodes Incorporated
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[1]    

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Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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