No | Part number | Description ( Function ) | Manufacturers | |
1 | DMN601K | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Lead-free Green DMN601K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4) E G TOP VIEW |
Diodes Incorporated |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to DMN601K |
Part No | Description ( Function) | Manufacturers | |
DMN6013LFG | N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION DMN6013LFG 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 60V RDS(ON) max 13mΩ @ VGS = 10V 18mΩ @ VGS = 4.5V ID max TA = +25°C 10.3A 8.8A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) |
Diodes |
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DMN6013LFGQ | 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION DMN6013LFGQ 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary BVDSS 60V RDS(ON) max 13m @ VGS = 10V 18m @ VGS = 4.5V ID max TA = +25°C 10.3A 8.8A Description and Applications This MOSFET is designed to meet the stringent requirements o |
Diodes |
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DMN601DMK | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary V(BR)DSS 60V RDS(ON) Max 2.4Ω @ VGS = 10V 4.0Ω @ VGS = 4V ID Max TA = 25°C 510mA 390mA Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performa |
Diodes Incorporated |
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DMN601DWK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DMN601DWK Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low |
Diodes Incorporated |
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DMN601TK | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Lead-free Green DMN601TK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lea |
Diodes Incorporated |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |