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DMN53D0LW PDF Datasheet

The DMN53D0LW is N-channel Enhancement Mode MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 DMN53D0LW
N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT Product Summary V(BR)DSS 50V RDS(ON) 2.0Ω @ VGS = 10V 3.0Ω @ VGS = 5V ID TA = +25°C 360mA 250mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  DC-DC Converters  Power

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Recommended search results related to DMN53D0LW

Part No Description ( Function) Manufacturers PDF
DMN53D0L   N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT DMN53D0L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 500 mA 200 mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (R

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DMN53D0LDW   N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT DMN53D0LDW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 360mA 250mA Description This new generation MOSFET has been designed to minimize the on-state resistance

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DMN53D0LQ   N-CHANNEL ENHANCEMENT MODE MOSFET

DMN53D0LQ N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 500 mA 200 mA Features and Benefits  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance �

Diodes
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DMN53D0LT   N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT DMN53D0LT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 350 mA 200 mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (

Diodes
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DMN53D0LV   N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT DMN53D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 350 mA 200 mA Description and Applications This MOSFET has been designed to minimize the on-state resista

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