No | Part number | Description ( Function ) | Manufacturers | |
1 | DMN53D0LDW | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT DMN53D0LDW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 360mA 250mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency powe |
Diodes |
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Recommended search results related to DMN53D0LDW |
Part No | Description ( Function) | Manufacturers | |
DMN53D0L | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT DMN53D0L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 500 mA 200 mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (R |
Diodes |
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DMN53D0LQ | N-CHANNEL ENHANCEMENT MODE MOSFET DMN53D0LQ N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 500 mA 200 mA Features and Benefits Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance � |
Diodes |
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DMN53D0LT | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT DMN53D0LT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 350 mA 200 mA Description and Applications This MOSFET has been designed to minimize the on-state resistance ( |
Diodes |
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DMN53D0LV | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT DMN53D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 350 mA 200 mA Description and Applications This MOSFET has been designed to minimize the on-state resista |
Diodes |
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DMN53D0LW | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary V(BR)DSS 50V RDS(ON) 2.0Ω @ VGS = 10V 3.0Ω @ VGS = 5V ID TA = +25°C 360mA 250mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it |
Diodes |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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