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Datasheet DMN4800LSSQ Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 DMN4800LSSQ   N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT DMN4800LSSQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) max 14mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID max TA = +25°C 8.6A 7.1A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance,
 Diodes
Diodes		 datasheet DMN4800LSSQ pdf

DMN4800L Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
DMN4800LSS

N-CHANNEL ENHANCEMENT MODE MOSFET

DMN4800LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 14mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID max TA = +25°C 8.6A 7.1A Features  Lo       w On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
Diodes
Diodes		 datasheet pdf - Diodes
DMN4800LSSQ

N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT DMN4800LSSQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) max 14mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID max TA = +25°C 8.6A 7.1A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior sw
 Diodes
Diodes		 datasheet pdf - Diodes
DMN4800LSSL

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary V(BR)DSS 30V RDS(on) 14mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID max TA = +25°C 8.0A 6.7A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for
Diodes
Diodes		 datasheet pdf - Diodes


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Número de pieza Descripción Fabricantes PDF
SPS122

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 Sanken
Sanken		 PDF


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