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Datasheet DMN4800LSS Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | DMN4800LSS | N-CHANNEL ENHANCEMENT MODE MOSFET DMN4800LSS
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V RDS(ON) max 14mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID max TA = +25°C 8.6A 7.1A
Features
Lo w On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & |
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| 2 | DMN4800LSSL | N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary
V(BR)DSS 30V
RDS(on)
14mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V
ID max TA = +25°C
8.0A
6.7A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency powe |
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| 1 | DMN4800LSSQ | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
DMN4800LSSQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) max
14mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V
ID max TA = +25°C
8.6A
7.1A
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, |
Diodes |
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