Datasheet DMN33D8LT Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	DMN33D8LT	N-CHANNEL ENHANCEMENT MODE MOSFET NEW PNREOWDUPCRTODUCT Product Summary V(BR)DSS 30V RDS(ON) 5 Ω @ VGS = 4V 7 Ω @ VGS = 2.5V ID TA = +25°C 200 mA 115 mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for	Diodes

DMN33D Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
DMN33D8LV	N-CHANNEL ENHANCEMENT MODE MOSFET ANDEV AWNPNCREEOWIDNPUFRCOOTRDMUACTTI O N DMN33D8LV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 3Ω @ VGS = 4.5V 7Ω @ VGS = 2.5V ID max TA = +25°C 350 mA Description This MOSFET has been designed to minimize the on-state resistance (R	Diodes
DMN33D8L	N-CHANNEL ENHANCEMENT MODE MOSFET NEW PNREOWDUPCRTODUCT Product Summary V(BR)DSS 30V RDS(ON) max 3.0Ω @ VGS = 10V 3.8Ω @ VGS = 5V ID max TA = +25°C 250mA 200mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching per	Diodes
DMN33D8LDW	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ANDEV AWNPNCREEOWIDNPUFRCOOTRDMUACTTI O N DMN33D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 3Ω @ VGS = 4.5V 5Ω @ VGS = 4.0V 7Ω @ VGS = 2.5V ID max TA = +25°C 250 mA 200 mA 100 mA Description This MOSFET has been designed to mi	Diodes

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Número de pieza	Descripción	Fabricantes	PDF
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