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Datasheet DMN33D8L Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | DMN33D8L | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PNREOWDUPCRTODUCT
Product Summary
V(BR)DSS 30V
RDS(ON) max
3.0Ω @ VGS = 10V 3.8Ω @ VGS = 5V
ID max TA = +25°C
250mA
200mA
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it |
 Diodes |
 |
| 3 | DMN33D8LDW | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ANDEV AWNPNCREEOWIDNPUFRCOOTRDMUACTTI O N
DMN33D8LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(ON) max
3Ω @ VGS = 4.5V 5Ω @ VGS = 4.0V 7Ω @ VGS = 2.5V
ID max TA = +25°C
250 mA 200 mA 100 mA
Description
This MOSFET has been designed to minimize the on-state |
Diodes |
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| 2 | DMN33D8LT | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PNREOWDUPCRTODUCT
Product Summary
V(BR)DSS 30V
RDS(ON)
5 Ω @ VGS = 4V 7 Ω @ VGS = 2.5V
ID TA = +25°C
200 mA
115 mA
Description
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for |
Diodes |
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| 1 | DMN33D8LV | N-CHANNEL ENHANCEMENT MODE MOSFET ANDEV AWNPNCREEOWIDNPUFRCOOTRDMUACTTI O N
DMN33D8LV
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(ON) max
3Ω @ VGS = 4.5V 7Ω @ VGS = 2.5V
ID max TA = +25°C
350 mA
Description
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet main |
Diodes |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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