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Datasheet DMN3112S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | DMN3112S | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DMN3112S
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
• Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free B |
Diodes |
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2 | DMN3112S | N-CHANNEL ENHANCEMENT MODE MOSFET Product specification
DMN3112S
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2 |
TY Semiconductor |
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1 | DMN3112SSS | SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET DMN3112SSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
• Low On-Resistance • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By |
Diodes |
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Número de pieza | Descripción | Fabricantes | |
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