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DMN2300UFD PDF Datasheet

The DMN2300UFD is 20V N-channel Enhancement Mode MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 DMN2300UFD
20V N-CHANNEL ENHANCEMENT MODE MOSFET

A Product Line of Diodes Incorporated DMN2300UFD 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) Max 200mΩ @ VGS = 4.5V 260mΩ @ VGS = 2.5V 400mΩ @ VGS = 1.8V 500mΩ @ VGS = 1.5V ID max TA = 25°C (Notes 4) 1.73A 1.50A 1.27A 1.15A Features and Benefits • • • • • • Low Gate Threshold Voltage Fast Switching Speed “Lea

Diodes Incorporated
Diodes Incorporated
pdf

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Recommended search results related to DMN2300UFD

Part No Description ( Function) Manufacturers PDF
DMN2300U   N-CHANNEL ENHANCEMENT MODE MOSFET

A Product Line of Diodes Incorporated DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V(BR)DSS 20V RDS(on) 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V ID Max (Note 5) 1.40A @ TA = 25°C 1.20A @ TA = 25°C 1.0A @ TA = 25°C Features and

Diodes
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DMN2300UFB   20V N-CHANNEL ENHANCEMENT MODE MOSFET

datasheet39.com A Product Line of Diodes Incorporated DMN2300UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 175mΩ @ VGS= 4.5V 240mΩ @ VGS= 2.5V 360mΩ @ VGS= 1.8V ID max TA = 25°C (Note 4) 1.30A 1.11A 0.91A Features and Benefits • • •

Diodes Incorporated
Diodes Incorporated
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DMN2300UFB4   20V N-CHANNEL ENHANCEMENT MODE MOSFET

datasheet39.com A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V ID max TA = 25°C (Notes 4) 1.30A 1.11A 0.91A Features and Benefits • �

Diodes Incorporated
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DMN2300UFL4   DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DMN2300UFL4 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V Max RDS(on) 195mΩ @ VGS = 4.5V 260mΩ @ VGS = 2.5V 380mΩ @ VGS = 1.8V 520mΩ @ VGS = 1.5V ID max TA = +25°C (Note 6) 2.11A 1.83A 1.51A 1.29A Features and Benefits • Footprint of Just 1.3

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