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Datasheet DMN2230UQ Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 DMN2230UQ   N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT Product Summary BVDSS 20V RDS(ON) max 110mΩ @ VGS = 4.5V 145mΩ @ VGS = 2.5V 230mΩ @ VGS = 1.8V ID max TA = +25°C 2A 1.7A 1.3A DMN2230UQ N-CHANNEL ENHANCEMENT MODE MOSFET Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching
 Diodes
Diodes		 datasheet DMN2230UQ pdf

DMN223 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
DMN2230U

N-CHANNEL ENHANCEMENT MODE MOSFET

Product specification DMN2230U N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • 110 mΩ @ VGS = 4.5V • 145 mΩ @ VGS = 2.5V • 230 mΩ @ VGS = 1.8V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead, Halogen and Antimony Free, RoHS
 TY Semiconductor
TY Semiconductor		 datasheet pdf - TY Semiconductor
DMN2230U

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN2230U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • Low On-Resistance • 110 mΩ @ VGS = 4.5V • 145 mΩ @ VGS = 2.5V • 230 mΩ @ VGS = 1.8V Low Gate Threshold Voltage Low Input Capacitance Fas
 Diodes
Diodes		 datasheet pdf - Diodes
DMN2230UQ

N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT Product Summary BVDSS 20V RDS(ON) max 110mΩ @ VGS = 4.5V 145mΩ @ VGS = 2.5V 230mΩ @ VGS = 1.8V ID max TA = +25°C 2A 1.7A 1.3A DMN2230UQ N-CHANNEL ENHANCEMENT MODE MOSFET Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitanc
 Diodes
Diodes		 datasheet pdf - Diodes


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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