No | Part number | Description ( Function ) | Manufacturers | |
1 | DMN2005UFG | N-CHANNEL ENHANCEMENT MODE MOSFET ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION DMN2005UFG 20V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary Features and Benefits V(BR)DSS 20V RDS(ON) max 4.6mΩ @ VGS = 4.5V 8.7mΩ @ VGS = 2.5V ID max TA = 25°C (t<10s) 24.1A 17.5A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performanc |
Diodes |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to DMN2005UFG |
Part No | Description ( Function) | Manufacturers | |
DMN2005DLP4K | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Ultra Low Profile Package • Low On-Resistance • Very Low Gate Threshold Voltage, 0.9V Max. • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2 |
Diodes |
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DMN2005K | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: DMN2005K DMN2005K NEW PRODUCT NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Moun |
Diodes Incorporated |
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DMN2005LP4K | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: DMN2005LP4K DMN2005LP4K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW NEW PRODUCT Features • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface M |
Diodes Incorporated |
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DMN2005LPK | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DMN2005LPK Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features · · · · · · · · Low On-Resistance Low Gate Threshold Voltage Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Comp |
Diodes Incorporated |
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DMN2005UPS | N-CHANNEL ENHANCEMENT MODE MOSFET A D VNAEN CWEPDRIONDFUOCRTM A T I O N DMN2005UPS Green 20V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary Features V(BR)DSS 20V RDS(ON) 4.6mΩ @ VGS = 4.5V 8.7mΩ @ VGS = 2.5V ID TC = +25°C 100A 80A Description This new generation P-Channel Enhancement Mode |
Diodes |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |