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DMN2005UFG PDF Datasheet

The DMN2005UFG is N-channel Enhancement Mode MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 DMN2005UFG
N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION DMN2005UFG 20V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary Features and Benefits V(BR)DSS 20V RDS(ON) max 4.6mΩ @ VGS = 4.5V 8.7mΩ @ VGS = 2.5V ID max TA = 25°C (t<10s) 24.1A 17.5A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performanc

Diodes
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Recommended search results related to DMN2005UFG

Part No Description ( Function) Manufacturers PDF
DMN2005DLP4K   DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Ultra Low Profile Package • Low On-Resistance • Very Low Gate Threshold Voltage, 0.9V Max. • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2

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DMN2005K   N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SPICE MODEL: DMN2005K DMN2005K NEW PRODUCT NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Moun

Diodes Incorporated
Diodes Incorporated
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DMN2005LP4K   N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SPICE MODEL: DMN2005LP4K DMN2005LP4K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW NEW PRODUCT Features • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface M

Diodes Incorporated
Diodes Incorporated
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DMN2005LPK   N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN2005LPK Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features · · · · · · · · Low On-Resistance Low Gate Threshold Voltage Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Comp

Diodes Incorporated
Diodes Incorporated
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DMN2005UPS   N-CHANNEL ENHANCEMENT MODE MOSFET

A D VNAEN CWEPDRIONDFUOCRTM A T I O N DMN2005UPS Green 20V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary Features V(BR)DSS 20V RDS(ON) 4.6mΩ @ VGS = 4.5V 8.7mΩ @ VGS = 2.5V ID TC = +25°C 100A 80A Description This new generation P-Channel Enhancement Mode

Diodes
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