No | Part number | Description ( Function ) | Manufacturers | |
1 | DMN1150UFB | N-CHANNEL ENHANCEMENT MODE MOSFET A D VNAENWC EP IRNOFDOURCMTA T I O N DMN1150UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 12V RDS(on) max 0.15Ω @ VGS = 4.5V 0.185Ω @ VGS = 2.5V 0.21Ω @ VGS = 1.8V ID TA = +25°C 1.41A 1.25A 1.16A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making |
Diodes |
0  1  2  3  4  5  6  7  8 9 |
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DMN1150UFL3 | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device BVDSS N-Channel 12V RDS(ON) Max 150mΩ @ VGS = 4.5V 185mΩ @ VGS = 2.5V ID Max TA = +25°C 2.0A 1.8A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, mak |
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2SA1150 | TRANSISTOR (LOW FREQUENCY AMPLIFIER APPLICATIONS) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 2SA1150 Low Frequency Amplifier Applications Unit: mm • High hFE: hFE = 100~320 • Complementary to 2SC2710. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base vo |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
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