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Datasheet DMN10H170SVT Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | DMN10H170SVT | N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INNEFWORPRMOADTIUOCNT
DMN10H170SVT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 100V
RDS(ON) max
160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V
ID max TA = +25°C
2.6A
2.3A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet |
 Diodes |
 |
| 1 | DMN10H170SVTQ | 100V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INNEFWORPRMOADTIUOCNT
Product Summary
BVDSS 100V
RDS(ON) Max
160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V
ID Max TA = +25°C
2.6A
2.3A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it id |
Diodes |
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