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DMN10H120SFG PDF Datasheet

The DMN10H120SFG is N-channel Enhancement Mode MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 DMN10H120SFG
N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION Product Summary V(BR)DSS 100V RDS(ON) max 110mΩ @ VGS = 10V 122mΩ @ VGS = 6.0V ID max TA = +25°C 3.8 A 3.6 A Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications • Power Management Functions

Diodes
Diodes
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Recommended search results related to DMN10H120SFG

Part No Description ( Function) Manufacturers PDF
DMN10H120SE   N-CHANNEL ENHANCEMENT MODE MOSFET

A D V A N C E E DN IENWF OPRR OMDA TUICOTN Product Summary V(BR)DSS 100V RDS(ON) max 110mΩ @ VGS = 10V 122mΩ @ VGS = 6.0V ID max TA = +25°C 3.6A 3.4A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superi

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828310120000x   (8283 Series) Plug Straight

w w w .D at aS he et 4U .c om

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Kyocera
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AA0410120KLx-xxx   AXIAL INDUCTOR

www.DataSheet4U.net SPECIFICATION FOR APPROVAL REF : 20080714-B PROD. NAME ABC'S DWG NO. AA0410□□□□L□-□□□ PAGE: 1 AXIAL INDUCTOR ABC'S ITEM NO. Ⅰ﹒CONFIGURATION & DIMENSIONS: A : B : C : D : ψ: W 4.0 max. 10.5 max. 61.0 ref. 25.4 min. 0.65 m/m m/m m/m m/m

ABC Taiwan Electronics
ABC Taiwan Electronics
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C2D10120   Silicon Carbide Schottky Diode

C2D10120–Silicon Carbide Schottky Diode Zero Recovery® Rectifier Features • • • • • • • VRRM = 1200 V IF = 10 A Qc = 61 nC Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Tempe

CREE
CREE
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C2D10120A   Silicon Carbide Schottky Diode

C2D10120A Silicon Carbide Schottky Diode VRRM = 1200 VRRM = 1200 V V IF (TC=135˚C) = 14.5 A IF = 10 A Qc nC 61 nC Qc = = 61 Zero R Features ecovery® Rectifier Package • • • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Current

Cree
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[1]    

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Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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