No | Part number | Description ( Function ) | Manufacturers | |
1 | DMN1019USN | 12V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary V(BR)DSS 12V RDS(ON) MAX 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V ID TA = +25°C 9.3A 8.5A 7.9A 6.9A 4.6A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high effici |
Diodes |
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Part No | Description ( Function) | Manufacturers | |
DMN1019UFDE | 12V N-CHANNEL ENHANCEMENT MODE MOSFET Green DMN1019UFDE 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V(BR)DSS RDS(ON) max 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V Package ID max TA = +25°C 11A 10 9A 8A 5A Features • • • |
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DMN1019UVT | 12V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT DMN1019UVT 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 12V RDS(ON) MAX 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V ID TA = +25°C 10.7A 9.8A 9.1A 8.0A 5.3A Description This new generation MOSF |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
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