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Datasheet DMJ70H1D3SI3 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | DMJ70H1D3SI3 | N-CHANNEL ENHANCEMENT MODE MOSFET A D V A N C E DNIEN FWOPRRMOADT IU COTN
Product Summary
BVDSS 700V
RDS(on) max 1.3Ω @ VGS = 10V
ID TC = +25°C
4.6A
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-effi |  Diodes | mosfet |
DMJ Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | DMJ70H1D3SH3 | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
Product Summary
BVDSS 700V
RDS(on) max 1.3Ω @ VGS = 10V
ID TC = +25°C
4.6A
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management appl Diodes mosfet | | |
| 2 | DMJ70H1D3SI3 | N-CHANNEL ENHANCEMENT MODE MOSFET A D V A N C E DNIEN FWOPRRMOADT IU COTN
Product Summary
BVDSS 700V
RDS(on) max 1.3Ω @ VGS = 10V
ID TC = +25°C
4.6A
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-effi Diodes mosfet | | |
| 3 | DMJ70H1D3SJ3 | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
Product Summary
BVDSS 700V
RDS(ON) Max 1.3Ω @ VGS = 10V
ID TC = +25°C
4.6A
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applica Diodes mosfet | | |
| 4 | DMJ70H900HJ3 | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
DMJ70H900HJ3
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 700V
RDS(ON) Max 0.9Ω @ VGS = 10V
ID TC = +25°C
7A
Features and Benefits
Low On-Resistance High BVDSS Rating for Power Application Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 Diodes mosfet | | |
| 5 | DMJ7N70SK3 | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
DMJ7N70SK3
700V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 700V
RDS(on) max 1.25Ω @ VGS = 10V
ID TC = +25°C
3.9A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, Diodes mosfet | | |
| 6 | DMJT9435 | PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT
DMJT9435
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
Features
• Ideally Suited for Automated Assembly Processes • Low Collector-Emitter Saturation Voltage • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • "Green" De Diodes transistor | | |
| 7 | DMJxxxx | Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
Silicon Beam–Lead Schottky Barrier Mixer Diodes
DME, DMF and DMJ Series
Features
Ideal for MIC Low 1/f Noise Low Intermodulation Distortion Low Turn On Hermetically Sealed Packages SPC Controlled Wafer Fabrication
Description
Alpha beam–lead and chip Schottky barrier mixer  Alpha diode | |
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